Main Page
Library Polices
Library rules and regulations
General Policy of the library
Policy and Instructions for Special Groups
Policy and Instructions of Loan services
Policy and instructions for the Reference Service
Policy and instructions for Electronic Services
Policy and Instructions for Periodicals
Policy and Instructions for Programs and Activitie
Policy and Instructions for Donations
General information
Brief History
Organizational structure
Management and departments
Administration Affairs
Department of special groups
Digital Libraries
Digital Library at King Abdulaziz University
Saudi Digital Library
DL+
PhotoAlbum
Awards
Latest News
Files
FAQ
Researches
عربي
English
About
Admission
Academic
Research and Innovations
University Life
E-Services
Search
Vice Deanship of Library Affairs - Girls Campus
Document Details
Document Type
:
Thesis
Document Title
:
Study of the Effect of Irradiation on Structural and Electrical Properties of (Bi2Se3 – Si) (Bismuth Selenide - Silicon Junction Thin Films)
دراسة أثر التشعيع على الخصائص التركيبية و الكهربية للوصلات الثنائية من الأغشية الرقيقة لسيلينيد البزموث والسيليكون (Bi2Se3 – Si)
Subject
:
ELECTRONIC ENGINEERING
Document Language
:
Arabic
Abstract
:
The object of this thesis was devoted to study the crystal structure and electrical transport properties of Bismuth Selenid thin film. For this purpose, high purity Bi2Se3 is thermally evaporated from molybdenum boat in a vacum of 10-5 Torr, on to glass substitutes for structure and electrical transport measurements. The X-ray diffraction patterns of powder Bi2Se3 showed polycrystalline structure of Hexagonal phase with lattice constants of: a = 4.143 Å , c = 28.620 Å The X-ray diffraction patterns on Bi2Se3 thin films showed the crystal structure of Hexagonal system and they have prefer orientation (015) and (006). The annealing effect showed an increase in the degree of crystallinity. The effect of gamma irradiation an Bi2Se3 thin film was studied at doses of 50,200,500 kgy. The X-ray diffraction patterns of Bi2Se3 thin films showed the degree of crystallinity increase as the doses increase. The electrical transport properties such as electrical resistivity ρ was studied for films of different thickneses as deposited. It was found that for Bi2Se3 films the electrical conductivity is strongly affected by the sample temperature, the heat treatment and film thickness. Bi2Se3 films showed semiconducting behaviour. The dependence of electrical resistivity on film thickness showed that the electrical resistivity decreases as the film thickness increases. The tow activation energies ΔE1, ΔE2 of the free charge carriers for Bi2Se3 samples was calculated using the electrical resistivity data at different temperature for different thickneses. It was found that the activation energy decrease as the film thickness increases. The current-voltage characteristics of n-Bi2Se3 / p-Si and n- Bi2Se3 / n-Si heterojunctions were studied throughout this study and some of the following parameters were: 1. The rectification ration R.R. 2. Series resistance Rs and short circuit resistance Rsh. 3. Reverse saturation current Is. 4. Diode quality factor n`. 5. Barrier height φb. Finally, the current-voltage characteristics of n-Bi2Se3 / p-Si and n- Bi2Se3 / n-Si heterojunctions were studied after irradiation at doses 10, 50 kgy. It was found that the electrical conductivity increases as the doses increases.
Supervisor
:
Fatma Salem Bahabry
Thesis Type
:
Master Thesis
Publishing Year
:
1430 AH
2009 AD
Number Of Pages
:
222
Added Date
:
Monday, September 9, 2013
Researchers
Researcher Name (Arabic)
Researcher Name (English)
Researcher Type
Dr Grade
Email
رباب رياض باهبلري
Bahabry, Rabab Riyad
Investigator
Master
Files
File Name
Type
Description
35957.pdf
pdf
35958.pdf
pdf
35959.pdf
pdf
35960.pdf
pdf
35961.pdf
pdf
Back To Researches Page