Document Details

Document Type : Article In Journal 
Document Title :
Synthesis and characterization of AIS chalcopyrite thin films for solar cell applications
Synthesis and characterization of AIS chalcopyrite thin films for solar cell applications
 
Subject : physics 
Document Language : English 
Abstract : Highly stiochiometric AgInSe2 thin film was prepared on p-type Si (111) substrate via sol-gel spin coating technique. X-ray diffraction spectrum depicted that the crystal structure of AgInSe2 film was chalcopyrite with lattice constants a = 6.102 angstrom and c = 11.69 angstrom. The surface morphology was investigated by a scanning electron microscope (SEM). The results showed that the spherical particles are uniformly distributed with average particle size 23 nm. The current-voltage characteristic curves showed Schottky diode like behavior. The influence of annealing temperatures on the I-V characteristics, photocurrent and solar cell conversion efficiency was examined. The results indicated that the annealing temperature improved the AgInSe2/Si heterostructure photoconductivity properties 
ISSN : 0167-577x 
Journal Name : MATERIALS LETTERS 
Volume : 82 
Issue Number : 1 
Publishing Year : 1433 AH
2012 AD 
Article Type : Article 
Added Date : Sunday, July 23, 2017 

Researchers

Researcher Name (Arabic)Researcher Name (English)Researcher TypeDr GradeEmail
F.A Al-AgelAl-Agel, F.A InvestigatorDoctorate 
Waleed E MahmoudMahmoud, Waleed E ResearcherDoctoratew_e_mahmoud@yahoo.com

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