Main Page
About Science
Faculty Deanship
Letter of Dean
Overview of Deanship
Vice Deans
Vice Dean
Letter of Vice-dean
Overview of Vice-deanship
Vice Dean for Graduate Studies
Letter of Vice Dean for Graduate Studies
Overview of Vice Dean of Postgraduate Studies
Research and Innovation Unit
Vice Dean for Girls Campus
Faculty Management
Letter of Managing Director-Boys Campus
Letter of Managing Director-Girls Campus
Overview of Management
Educational Affairs
Males Campus
Staff
Females Campus
Contact Us
Research
عربي
English
About
Admission
Academic
Research and Innovations
University Life
E-Services
Search
Faculty of Sciences
Document Details
Document Type
:
Article In Journal
Document Title
:
Structural and optical properties of Te doped Ge-Se phasechange thin films: A material for optical storage
Structural and optical properties of Te doped Ge-Se phasechange thin films: A material for optical storage
Subject
:
physics
Document Language
:
English
Abstract
:
Amorphous Ge25Se75-xTex chalcogenide thin films of thickness 400 nm were prepared by thermal evaporation technique. Thin films were crystallized by transversely-excited atmospheric-pressure nitrogen laser for different time intervals. As-prepared and laser-irradiated thin films were characterized by X-ray diffraction, field emission scanning electron microscopy and UV/VIS/NIR spectroscopy. X-ray diffraction results show that the as-deposited films are of amorphous nature while the laser-irradiated films are of polycrystalline nature. The optical absorption spectra of these films were measured in the wavelength range of 400-1100 nm in order to drive the extinction and absorption coefficient of these films. It was found that the mechanism of the optical absorption follows the rule of the allowed nondirect transition. The optical band gap is found to decrease by increasing the laser-irradiation time. It is due to the crystallization of amorphous films. As the phase of the films changes from amorphous to crystalline, a non sharp change of the band gap is observed. The decrease in optical band gap by laser-irradiation is an interesting behavior for a material to be used in optical storage. The optical gap has been observed to increase with the increase of Te content in Ge-Se system. (
ISSN
:
1369-8001
Journal Name
:
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
Volume
:
18
Issue Number
:
1
Publishing Year
:
1435 AH
2014 AD
Article Type
:
Article
Added Date
:
Thursday, August 3, 2017
Researchers
Researcher Name (Arabic)
Researcher Name (English)
Researcher Type
Dr Grade
Email
F. A Al-Agel,
Al-Agel,, F. A
Investigator
Doctorate
Files
File Name
Type
Description
42454.pdf
pdf
Back To Researches Page