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Document Details
Document Type
:
Article In Journal
Document Title
:
TEMPERATURE DEPENDENCE OF THE ELECTRICAL CONDUCTIVITY AND HALL EFFECT OF THALLIUM GALLIUM DISULPHIDE SINGLE CRYSTALS
TEMPERATURE DEPENDENCE OF THE ELECTRICAL CONDUCTIVITY AND HALL EFFECT OF THALLIUM GALLIUM DISULPHIDE SINGLE CRYSTALS
Subject
:
physics
Document Language
:
English
Abstract
:
Single crystal of the layered compound TlGaS2 were grown by direct synthesis of their constituents. Their electrical conductivity and the Hall effect was studied as a function of the temperature, both perpendicular and parallel to the layer planes, and their behaviour proved to be highly anisotropic. The Hall-effect measurements revealed extrinsic p- type conduction with an acceptor impurity level located at 0.586 eV for sigma(perpendicular to) and at 0.43 eV for sigma(//) above the valence-band maximum. The variation of the Hall mobility and the carrier concentration with temperature were investigated. The scattering mechanism of the carriers throughout the entire temperature range of investigation was checked. The anisotropic factor was also estimated, and its temperature dependence was illustrated
ISSN
:
1584-8663
Journal Name
:
CHALCOGENIDE LETTERS
Volume
:
12
Issue Number
:
11
Publishing Year
:
1435 AH
2015 AD
Article Type
:
Article
Added Date
:
Wednesday, August 16, 2017
Researchers
Researcher Name (Arabic)
Researcher Name (English)
Researcher Type
Dr Grade
Email
A.T Nagat
Nagat, A.T
Investigator
Doctorate
S.A Hussein
Hussein, S.A
Researcher
Doctorate
seef73@gmail.com
S.E Al Garni
Al Garni, S.E
Researcher
Doctorate
S.R Alharbi
Alharbi, S.R
Researcher
Doctorate
Files
File Name
Type
Description
42650.pdf
pdf
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